منابع مشابه
Switching Characteristics of an Asymmetrical Complementary 4H-SiC Gate Turn- Off (GTO) Thyristor
This work is partially supported by US Office of Naval Research grant N00014-96-1-0926 Abstract The switching characteristics of 4H-SiC asymmetric GTO thyristors are studied and compared to Si based IGBTs, MCTs, and MOSFETs. Forward current density, turn-off time and forward blocking voltage parameters are matched for the various switching devices. From the measurements, the necessary parameter...
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This paper presents a numerical model of gate turn-off thyristors (GTO’s). The new concept of a controlledswitch realized by a controlled-current source is first introduced. Using this basic model, an equivalent circuit of the GTO is given. According to the characteristics of GTO given by manufacturers, the equations connected with all the parameters of the equivalent circuit are deduced. All o...
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With the increase in use of power electronics in transmission and distribution applications there is a growing demand for cost effective and highly efficient converters. Most of the utility applications have power electronics integrated in the system to improve the efficiency and functionality of the existing system. The development of semiconductor devices is vital for the growth of power elec...
متن کاملTYPE N / A 3 . DATES COVERED - 4 . TITLE AND SUBTITLE 20 kV , 2 cm 2 , 4 H - SIC Gate Turn -
The need for high voltage solid-state power electronic devices for advanced power distribution and energy conversion has grown rapidly in recent years, especially for pulsed power applications that require high turn-on di/dt. However, current power converters built with silicon (Si) switches are quite bulky and inefficient, making their utilization difficult in practical energy conversion and p...
متن کاملSTATCOM Analysis for improving Power Quality Constraints - A Literature Survey
With the development and advancement of power electronics devices in recent years, changes in the scenario in the field of controlling and handling the power quality issues have been very effective. FACTS devices are the outstanding approach. In this manuscript,we choose one such FACTS device known as STATCOM, a powerful shunt controller, for discussing its impact and depth how to tackle the po...
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ژورنال
عنوان ژورنال: IEEJ Transactions on Industry Applications
سال: 2001
ISSN: 0913-6339,1348-8163
DOI: 10.1541/ieejias.121.1095